Fabrication of Porous SiC by Direct Selective Laser Sintering Effect of Boron Carbide

Additive manufactured porous SiC is a promising material applied in extreme conditions characterised by high temperatures, chemical corrosion, and irradiation etc. However, residual Si’s existence deteriorates its performance limits application harsh environments. In this study, B4C was introduced into the selective laser sintering process of SiC, effects on forming ability, pore parameters, microstructure, phases were investigated. The results showed that when added, processing window enlarged. minimum energy density reduced from 457 J/cm2 to 214 content reached 15 wt%. Microstructure orientation enhanced, silicon decreased 38 at.% about 8 at.%. Small pores turned large with increase addition. findings indicate addition increases amount liquid phase during carbide, improving struts’ reducing reacting it. Therefore, will help improve selected laser-sintered carbide under conditions.